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Staff InP Laser Development Engineer

NOKIA
US Salary range: $139,283.72 - $258,669.77 * Plus potential incentive/variable compensation for eligible roles
United States, California, Sunnyvale
1322 Bordeaux Drive (Show on map)
Mar 13, 2026

Prerequisite experience should include 1 or more areas
* Design of InP lasers for transmitter PICs to spec
* Design of InP lasers for high-power applications to spec

Key engineering expertise in most of the following areas is required

* Design and simulation of optical waveguides, coupling lasers to fibers
* Simulation of lasers and SOAs with commercial or personally developed software, including carriers and optical fields
* Design of epitaxial layers required for active devices
* Process design/fabrication process development of InP devices or PICs
* Photonic device testing characterization of InP lasers and SOAs
* Extensive photonic device data query and analysis in manufacturing environment
* Experience guiding a team to develop InP lasers for commercial products

Ph.D. in EE or Physics, 3 to 10yrs industry experience designing and developing InP lasers for high volume applications.

NION2026


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