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Principal InP Laser Development Engineer

NOKIA
US Salary range: $159,782.61 -$ 296,739.13
United States, California, Sunnyvale
1322 Bordeaux Drive (Show on map)
Mar 13, 2026

Prerequisite experience should include 1 or more areas

  • Design of InP lasers for transmitter PICs
  • Design of InP lasers for high-power applications

Key engineering expertise in all of the following areas is required

  • Design and simulation of optical waveguides, coupling lasers to fibers
  • Simulation of lasers and SOAs with commercial or personally developed software, including carriers and optical fields
  • Design of epitaxial layers required for active devices
  • Process design/fabrication knowledge or process development experience of InP devices or PICs
  • Expertise in testing characterization of InP lasers and SOAs
  • Extensive photonic device data query and analysis in manufacturing environment
  • Experience guiding a team to develop InP lasers for commercial products

Location: willing to relocate to Sunnyvale/San Jose, CA

Ph.D. in EE or Physics, 8 to 15yrs industry experience designing and developing InP lasers for high volume applications.

NION2026


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